BSM100GP60 Infineon Technologies, BSM100GP60 Datasheet - Page 4

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BSM100GP60

Manufacturer Part Number
BSM100GP60
Description
IGBT Modules 600V 100A PIM
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSM100GP60

Configuration
Hex
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.95 V
Continuous Collector Current At 25 C
135 A
Gate-emitter Leakage Current
300 nA
Power Dissipation
250 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPIM3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSM100GP60
Manufacturer:
EUPEC
Quantity:
25
Part Number:
BSM100GP60
Manufacturer:
EUPEC
Quantity:
300
Part Number:
BSM100GP60
Quantity:
50
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Innere Isolation
internal insulation
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Gewicht
weight
IGBT-Module
IGBT-Modules
Thermische Eigenschaften / Thermal properties
Mechanische Eigenschaften / Mechanical properties
Technische Information / Technical Information
Gleichr. Diode/ Rectif. Diode
Trans. Wechsr./ Trans. Inverter
Diode Wechsr./ Diode Inverter
Trans. Bremse/ Trans. Brake
Diode Bremse/ Diode Brake
Gleichr. Diode/ Rectif. Diode
Trans. Wechsr./ Trans. Inverter
Diode Wechsr./ Diode Inverter
BSM100GP60
4(11)
Paste
grease
=1W/m*K
=1W/m*K
R
R
T
T
T
M
thCK
G
thJC
stg
op
vj
min.
-40
-40
-
-
-
-
-
-
-
-
-
Al
±10%
typ.
0,04
0,02
0,04
225
300
2
3
-
-
-
-
-
-
-
-
O
3
max.
150
125
125
0,5
0,3
0,5
0,5
1,2
-
-
-
DB-PIM-10.xls
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
Nm
°C
°C
°C
g

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