BSM100GP60 Infineon Technologies, BSM100GP60 Datasheet - Page 6

• Manufacturer Part Number: BSM100GP60
• Description: IGBT Modules 600V 100A PIM
• Manufacturer: Infineon Technologies

Specifications of BSM100GP60

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Continuous Collector Current At 25 C: 135 A
• Gate-emitter Leakage Current: 300 nA
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: EconoPIM3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
200
180
160
140
120
100
200
180
160
140
120
100
80
60
40
20
80
60
40
20
0
0
0
0
Übertragungscharakteristik Wechselr. (typisch)
Transfer characteristic Inverter (typical)
Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch)
Forward characteristic of FWD Inverter (typical)
0,2
2
0,4
4
BSM100GP60
Tj = 25°C
Tj = 125°C
0,6
Tj = 25°C
Tj = 125°C
V
V
GE
F
6
6(11)
[V]
[V]
0,8
8
1
I
C
V
= f (V
CE
10
= 20 V
I
F
1,2
= f (V
GE
)
F
)
12
1,4
1,6
14
DB-PIM-10.xls