FF600R17KF6C_B2 Infineon Technologies, FF600R17KF6C_B2 Datasheet - Page 4

• Manufacturer Part Number: FF600R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 975A
• Manufacturer: Infineon Technologies

Specifications of FF600R17KF6C_B2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 975 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 4.8 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 600.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
1200
1000
1200
1000
800
600
400
200
800
600
400
200
0
0
0,0
0,0
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
Ausgangskennlinie (typisch)
Output characteristic (typical)
0,5
0,5
1,0
1,0
vGE = 20V
vGE = 15V
vGE = 12V
vGE = 10V
vGE = 9V
vGE = 8V
FF 600 R 17 KF6C B2
1,5
1,5
2,0
2,0
4(8)
V
V
CE
CE
2,5
2,5
[V]
[V]
3,0
3,0
V
I
C
GE
= f (V
= 15V
I
T
C
vj
3,5
3,5
= f (V
= 125°C
CE
)
CE
)
4,0
4,0
Tvj = 25°C
Tvj = 125°C
vorläufige Daten
preliminary data
4,5
4,5
FF600R17KF6CB2_V.xls
5,0
5,0