FF600R17KF6C_B2 Infineon Technologies, FF600R17KF6C_B2 Datasheet - Page 7

• Manufacturer Part Number: FF600R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 975A
• Manufacturer: Infineon Technologies

Specifications of FF600R17KF6C_B2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 975 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 4.8 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 600.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
0,001
0,01
0,1
0,001
1200
1000
800
600
400
200
0
Transienter Wärmewiderstand
Transient thermal impedance
Sicherer Arbeitsbereich (RBSOA)
Reverse bias safe operation area (RBSOA)
0
r
r
i
J
i
J
[K/kW]
[K/kW]
i
i
[sec]
[sec]
i
200
: IGBT
: IGBT
: Diode
: Diode
0,01
FF 600 R 17 KF6C B2
400
600
0,003
0,003
0,1
4,92
2,5
1
7(8)
800
V
1000
0,045
CE
12,3
0,05
26,8
2
t [sec]
[V]
1
Z
thJC
1200
= f (t)
IC,Modul
IC,Chip
R
g
= 2,4 Ohm, T
9,14
0,45
5,2
0,1
Zth:Diode
Zth:IGBT
3
1400
10
vorläufige Daten
preliminary data
vj
= 125°C
1600
0,95
9,14
0,75
4
6
1800
100
FF600R17KF6CB2_V.xls