FF600R17KF6C_B2 Infineon Technologies, FF600R17KF6C_B2 Datasheet - Page 6

• Manufacturer Part Number: FF600R17KF6C_B2
• Description: IGBT Modules N-CH 1.7KV 975A
• Manufacturer: Infineon Technologies

Specifications of FF600R17KF6C_B2

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 1700 V
• Collector-emitter Saturation Voltage: 2.6 V
• Continuous Collector Current At 25 C: 975 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 4.8 KW
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM
• Ic (max): 600.0 A
• Vce(sat) (typ): 2.7 V
• Technology: IGBT2 Low Loss
• Housing: IHM 130 mm

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
800
700
600
500
400
300
200
100
1200
1000
800
600
400
200
0
0
0
0
Schaltverluste (typisch)
Switching losses (typical)
Schaltverluste (typisch)
Switching losses (typical)
200
Eon
Eoff
Erec
4
Eon
Eoff
Erec
FF 600 R 17 KF6C B2
400
E
on
8
R
gon
6(8)
= f (I
= R
R
I
C
600
G
E
goff
C
[A]
on
[9 9 9 9 ]
I
) , E
C
=2,4 9 9 9 9 , V
= 600A , V
= f (R
off
= f (I
CE
G
12
) , E
CE
= 900V, T
= 900V , T
800
C
) , E
off
= f (R
j
= 125°C
rec
j
= 125°C
= f (I
G
) , E
16
1000
C
)
vorläufige Daten
preliminary data
rec
= f (R
G
)
1200
FF600R17KF6CB2_V.xls
20