BSM200GA170DN2S Infineon Technologies, BSM200GA170DN2S Datasheet - Page 3

• Manufacturer Part Number: BSM200GA170DN2S
• Description: IGBT Modules N-CH 1.7KV 290A
• Manufacturer: Infineon Technologies

Specifications of BSM200GA170DN2S

• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 290 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 62MM

BSM 200 GA 170 DN2
Electrical Characteristics, at T
Parameter
Switching Characteristics, Inductive Load at T
Turn-on delay time
V
R
Rise time
V
R
Turn-off delay time
V
R
Fall time
V
R
Free-Wheel Diode
Diode forward voltage
I
I
Reverse recovery time
I
di
Reverse recovery charge
I
di
T
T
F
F
F
F
CC
CC
CC
CC
j
j
Gon
Gon
Goff
Goff
F
F
= 200 A, V
= 200 A, V
= 200 A, V
= 200 A, V
= 25 °C
= 125 °C
/dt = -1400 A/µs, T
/dt = -1400 A/µs
= 1200 V, V
= 1200 V, V
= 1200 V, V
= 1200 V, V
= 6.8
= 6.8
= 6.8
= 6.8
GE
GE
R
R
= -1200 V, V
= -1200 V, V
= 0 V, T
= 0 V, T
GE
GE
GE
GE
= 15 V, I
= 15 V, I
= -15 V, I
= -15 V, I
j
= 125 °C
j
j
= 25 °C
= 125 °C
GE
GE
C
C
C
C
= 200 A
= 200 A
= 0 V
= 0 V
= 200 A
= 200 A
j
= 25 °C, unless otherwise specified
Symbol
t
t
t
t
V
t
Q
3
d(on)
r
d(off)
f
rr
F
rr
j
= 125 °C
min.
-
-
-
-
-
-
-
-
-
Values
typ.
530
200
1250
110
2.3
2.1
0.8
14
50
max.
-
-
-
-
1000
400
1800
160
2.8
Oct-27-1997
Unit
ns
V
µs
µC