BSM200GA170DN2S Infineon Technologies, BSM200GA170DN2S Datasheet - Page 8

• Manufacturer Part Number: BSM200GA170DN2S
• Description: IGBT Modules N-CH 1.7KV 290A
• Manufacturer: Infineon Technologies

Specifications of BSM200GA170DN2S

• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 290 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: 62MM

BSM 200 GA 170 DN2
Forward characteristics of fast recovery
reverse diode
parameter: T
I
F
400
300
250
200
150
100
50
A
0
0.0
0.5
j
I
F
1.0
= f(V
1.5
F
)
2.0
T
j
=125°C
2.5
T
j
=25°C
V
V
F
3.5
8
Transient thermal impedance
Z
parameter: D = t
Z
thJC
th JC
K/W
10
10
10
10
10
10
= (t
-1
-2
-3
-4
-5
0
10
-5
p
)
single pulse
10
p
-4
/ T
10
-3
10
-2
Diode
D = 0.50
10
Oct-27-1997
t
-1
p
0.20
0.10
0.05
0.02
0.01
s
10
0