GA200SA60UP Vishay, GA200SA60UP Datasheet - Page 3

IGBT Transistors N-Ch 600 Volt 100A

GA200SA60UP

Manufacturer Part Number
GA200SA60UP
Description
IGBT Transistors N-Ch 600 Volt 100A
Manufacturer
Vishay
Datasheet

Specifications of GA200SA60UP

Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-227-4
Continuous Collector Current Ic Max
200 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Dc Collector Current
200A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
500W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
No. Of Pins
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GA200SA60UP
Quantity:
63
Part Number:
GA200SA60UPBF
Manufacturer:
AVX
Quantity:
25 000
Document Number: 94364
Revision: 22-Jul-10
1000
1000
100
100
10
10
5.0
0.5
Fig. 3 - Typical Transfer Characteristics
V
T
Fig. 2 - Typical Output Characteristics
200
160
120
J
CE
V
80
40
= 150 °C
0
1.0
GE
T
- Collector to Emitter Voltage (V)
0.1
J
= 150 °C
- Gate to Emitter Voltage (V)
Square wave:
Triangular wave:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
1.5
6.0
T
For technical questions within your region, please contact one of the following:
J
Clamp voltage:
80 % of rated
= 25 °C
I
T
J
= 25 °C
2.0
V
20 µs pulse width
V
5 µs pulse width
GE
GE
2.5
7.0
60 % of rated
= 15 V
= 25 V
Insulated Gate Bipolar Transistor
Ideal diodes
I
(Ultrafast Speed IGBT), 100 A
voltage
3.0
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
1
3.5
8.0
f - Frequency (kHz)
RMS
of Fundamental)
DiodesEurope@vishay.com
200
150
100
50
3
0
2
1
- 60 - 40 - 20 0
25
Fig. 5 - Typical Collector to Emitter Voltage vs.
10
V
80 µs pulse width
Fig. 4 - Maximum Collector Current vs.
GE
T
= 15 V
J
T
50
- Junction Temperature (°C)
C
Vishay Semiconductors
For both:
Duty cycle: 50 %
T
T
Gate drive as specified
Power dissipation = 140 W
- Case Temperature (°C)
Junction Temperature
J
sink
Case Temperature
= 125 °C
= 90 °C
20 40 60 80 100 120 140 160
75
GA200SA60UP
100
I
I
C
C
= 200 A
= 400 A
I
C
= 100 A
125
100
www.vishay.com
150
3

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