GA200SA60UP Vishay, GA200SA60UP Datasheet - Page 4

IGBT Transistors N-Ch 600 Volt 100A

GA200SA60UP

Manufacturer Part Number
GA200SA60UP
Description
IGBT Transistors N-Ch 600 Volt 100A
Manufacturer
Vishay
Datasheet

Specifications of GA200SA60UP

Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-227-4
Continuous Collector Current Ic Max
200 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Dc Collector Current
200A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
500W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
No. Of Pins
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GA200SA60UP
Quantity:
63
Part Number:
GA200SA60UPBF
Manufacturer:
AVX
Quantity:
25 000
GA200SA60UP
Vishay Semiconductors
www.vishay.com
4
30 000
25 000
20 000
15 000
10 000
5000
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
0
20
16
12
8
4
0
1
0
V
V
I
C
CE
C
C
0.001
CC
res
0.01
ies
= 110 A
0.1
- Collector to Emitter Voltage (V)
0.00001
Fig. 7 - Typical Capacitance vs.
= 400 V
1
C
Q
Collector to Emitter Voltage
oes
G
200
D = 0.02
- Total Gate Charge (nC)
D = 0.10
D = 0.50
D = 0.01
D = 0.20
D = 0.05
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
V
C
C
C
GE
ies
res
oes
10
= 0 V, f = 1 MHz
= C
= C
= C
400
Fig. 6 - Maximum Effektive Transient Thermal Impedance, Junction to Case
ge
gc
ce
+ C
+ C
0.0001
gc
gc
(thermal resistance)
Insulated Gate Bipolar Transistor
, C
600
(Ultrafast Speed IGBT), 100 A
Single pulse
ce
shorted
100
t
800
1
- Rectangular Pulse Duration (s)
0.001
0.01
DiodesEurope@vishay.com
Fig. 9 - Typical Switching Losses vs. Gate Resistance
100
10
60
50
40
30
20
10
0
1
- 60 - 40 - 20 0
0
V
V
T
I
C
Fig. 10 - Typical Switching Losses vs.
J
CC
GE
= 200 A
Notes:
1. Duty factor D = t
2. Peak T
= 25 °C
T
= 480 V
= 15 V
10
J
- Junction Temperature (°C)
R
G
Junction Temperature
- Gate Resistance (Ω)
J
20
= P
0.1
20 40 60 80 100 120 140 160
I
C
DM
P
= 100 A
DM
x Z
30
1
/t
t
1
thJC
2
Document Number: 94364
t
2
I
+ T
C
= 350 A
I
40
C
C
= 200 A
Revision: 22-Jul-10
R
V
V
GE
CC
G
= 2.0 Ω
1
= 15 V
= 480 V
50
60

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