GA200SA60UP Vishay, GA200SA60UP Datasheet - Page 6

• Manufacturer Part Number: GA200SA60UP
• Description: IGBT Transistors N-Ch 600 Volt 100A
• Manufacturer: Vishay

Specifications of GA200SA60UP

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-227-4
• Continuous Collector Current Ic Max: 200 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 500W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

GA200SA60UP
Vishay Semiconductors
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
www.vishay.com
6
Dimensions
Packaging information
Device code
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
2 (G)
1
2
3
4
5
6
7
8
G
1
-
-
-
-
-
-
-
-
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 100 A
A
2
Insulated Gate Bipolar Transistor (IGBT)
Generation 4, IGBT silicon, DBC construction
Current rating (200 = 200 A)
Single switch, no diode
SOT-227
Voltage rating (60 = 600 V)
Speed/type (U = Ultrafast)
None = Standard production
P = Lead (Pb)-free
n-channel
LINKS TO RELATED DOCUMENTS
1, 4 (E)
200
3 (C)
3
S
4
A
5
60
6
Lead assignment
4
1
[e-mail]
U
7
E
E
www.vishay.com/doc?95036
www.vishay.com/doc?95037
G
C
P
8
3
2
Document Number: 94364
Revision: 22-Jul-10