MGP15N35CL ON Semiconductor, MGP15N35CL Datasheet - Page 4

• Manufacturer Part Number: MGP15N35CL
• Description: IGBT Transistors 15A 350V Ignition
• Manufacturer: ON Semiconductor

Specifications of MGP15N35CL

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 380 V
• Collector-emitter Saturation Voltage: 10 V
• Maximum Gate Emitter Voltage: 22 V
• Gate-emitter Leakage Current: 150 W
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 15 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Channel Type: N
• Collector Current (dc) (max): 15A
• Package Type: TO-220AB
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 175C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 360V
• Power Dissipation Pd: 150W
• Collector Emitter Voltage V(br)ceo: 360V
• Operating Temperature Range: -55°C To +175°C
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
100
50
40
30
25
20
15
10
10
60
30
20
10
0
5
0
1
0
0
0
V
V
T
V
CE
J
CE
C
CE
0.5
20
= 25°C
iss
V
V
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
1
GE
GE
= 10 V
V
Figure 3. Transfer Characteristics
Figure 1. Output Characteristics
Figure 5. Capacitance Variation
GE
, GATE TO EMITTER VOLTAGE (VOLTS)
T
40
= 5.0 V
1
J
C
C
= 25°C
= 10.0 V
oss
2
rss
1.5
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
60
T
J
3
= 150°C
80
2
100
2.5
4
120
3
T
5
J
= −40°C
140
3.5
V
V
V
V
V
6
GE
GE
GE
GE
GE
160
4
= 3.0 V
= 2.5 V
= 4.5 V
= 4.0 V
= 3.5 V
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7
180
4.5
200
8
5
4
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.5
2.0
1.5
1.0
0.5
0.0
60
50
40
30
20
10
0
−50
−50
0
Figure 6. Threshold Voltage vs. Temperature
T
V
J
CE
Figure 4. Collector−to−Emitter Saturation
V
Mean + 4 σ
Mean − 4 σ
= 150°C
−25
−25
V
GE
1
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
GE
V
Voltage vs. Junction Temperature
= 5.0 V
Figure 2. Output Characteristics
GE
T
= 5.0 V
J
, JUNCTION TEMPERATURE (°C)
= 10.0 V
2
0
0
I
I
I
C
C
C
= 20 A
= 15 A
= 10 A
TEMPERATURE (°C)
25
25
3
Mean
50
50
4
75
75
5
I
I
C
C
= 25 A
= 5 A
V
V
V
V
V
100
I
100
C
6
GE
GE
GE
GE
GE
= 1 mA
= 4.5 V
= 4.0 V
= 3.5 V
= 3.0 V
= 2.5 V
125
125
7
150
150
8