CY7C1338G-100AXCT Cypress Semiconductor Corp, CY7C1338G-100AXCT Datasheet - Page 4

CY7C1338G-100AXCT

CY7C1338G-100AXCT

Manufacturer Part Number
CY7C1338G-100AXCT
Description
CY7C1338G-100AXCT
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1338G-100AXCT

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
4M (128K x 32)
Speed
100MHz
Interface
Parallel
Voltage - Supply
3.15 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1338G-100AXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Pin Configurations
Pin Definitions
Document Number: 38-05521 Rev. *F
A0, A1, A
BW
BW
GW
BWE
CLK
CE
CE
CE
OE
1
2
3
A
Name
C
, BW
, BW
B
D
synchronous
synchronous
synchronous
synchronous
synchronous
synchronous
synchronous
asynchronous
Input-clock Clock input. Used to capture all synchronous inputs to the device. Also used to increment the burst
Input-
Input-
Input-
Input-
Input-
Input-
Input-
Input-
I/O
(continued)
Address inputs used to select one of the 128 K address locations. Sampled at the rising edge
of the CLK if ADSP or ADSC is active LOW, and CE
the 2-bit counter.
Byte write select inputs, active LOW. Qualified with BWE to conduct byte writes to the SRAM.
Sampled on the rising edge of CLK.
Global write enable input, active LOW. When asserted LOW on the rising edge of CLK, a global
write is conducted (all bytes are written, regardless of the values on BW
Byte write enable input, active LOW. Sampled on the rising edge of CLK. This signal must be
asserted LOW to conduct a byte write.
counter when ADV is asserted LOW, during a burst operation.
Chip enable 1 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with
CE
when a new external address is loaded.
Chip enable 2 input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with
CE
loaded.
Chip enable 3 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with
CE
loaded.
Output enable, asynchronous input, active LOW. Controls the direction of the I/O pins. When
LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as
input data pins. OE is masked during the first clock of a read cycle when emerging from a deselected
state.
A
B
C
D
G
H
K
M
N
R
U
E
F
L
P
T
J
2
1
1
and CE
and CE
and CE
NC/288M
NC/144M
V
V
V
V
V
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
NC
NC
DDQ
DDQ
DDQ
DDQ
DDQ
1
C
C
C
C
D
D
D
D
3
3
2
to select/deselect the device. ADSP is ignored if CE
to select/deselect the device. CE
to select/deselect the device. CE
NC/72M
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
CE
V
NC
NC
NC
2
A
A
A
DD
2
C
C
C
C
D
D
D
D
119-ball BGA Pinout
MODE
BW
BW
V
V
V
V
V
V
V
V
NC
NC
A
A
A
A
3
SS
SS
SS
SS
SS
SS
SS
SS
C
D
ADSP
ADSC
BWE
ADV
V
CE
V
CLK
V
GW
NC
OE
NC
NC
A1
A0
A
4
DD
DD
DD
Description
1
2
3
is sampled only when a new external address is
is sampled only when a new external address is
BW
BW
V
V
V
V
V
V
V
V
1
NC
NC
NC
A
A
A
A
, CE
5
SS
SS
SS
SS
SS
SS
SS
SS
B
A
2
, and CE
NC/36M
NC/9M
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
V
NC
NC
NC
6
A
A
A
A
DD
B
B
B
B
A
A
A
A
3
1
are sampled active. A
is HIGH. CE
NC/576M
NC/1G
V
V
V
V
V
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
[A:D]
NC
DDQ
DDQ
DDQ
DDQ
ZZ
DDQ
7
B
B
B
B
A
A
A
A
and BWE).
1
is sampled only
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