CY7C1338G-100AXCT Cypress Semiconductor Corp, CY7C1338G-100AXCT Datasheet - Page 9

• Manufacturer Part Number: CY7C1338G-100AXCT
• Description: CY7C1338G-100AXCT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1338G-100AXCT

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (128K x 32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
(Above which the useful life may be impaired. For user
guidelines, not tested.)
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage on V
Supply voltage on V
DC voltage applied to outputs
in tri-state...........................................–0.5 V to V
Electrical Characteristics
Over the Operating Range
Document Number: 38-05521 Rev. *F
V
V
V
V
V
V
I
I
I
I
I
I
I
Notes
Parameter
X
OZ
DD
SB1
SB2
SB3
SB4
9. Overshoot: V
10. T
DD
DDQ
OH
OL
IH
IL
Power-up
: Assumes a linear ramp from 0 V to V
Power supply voltage
I/O supply voltage
Output HIGH voltage
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current
except ZZ and MODE
Input current of MODE
Input current of ZZ
Output leakage current GND  V
V
current
Automatic CE
power-down
current—TTL inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—TTL inputs
IH
DD
(AC) < V
operating supply
Description
DD
DDQ
DD
relative to GND ........–0.5 V to +4.6 V
relative to GND....... –0.5 V to +V
+ 1.5 V (pulse width less than t
[9, 10]
[9]
for 3.3 V I/O, I
for 2.5 V I/O, I
for 2.5 V I/O, I
for 2.5 V I/O
for 3.3 V I/O
for 2.5 V I/O
GND  V
Input = V
Input = V
Input = V
Input = V
V
f = f
Max V
V
inputs switching
Max V
V
f = 0, inputs static
Max V
V
f = f
Max V
V
f = 0, inputs static
for 3.3 V I/O, I
for 3.3 V I/O
DD
IN
IN
IN
IN
DD
 V
MAX
 V
MAX
 V
 V
(min) within 200 ms. During this time V
= Max, I
DD
DD
DD
DD
DDQ
DD
DD
IH
= 1/t
, inputs switching
I
I
, device deselected,
, device deselected,
, device deselected,
, device deselected,
SS
DD
SS
DD
or V
DDQ
 V
 V
– 0.3 V or V
– 0.3 V or V
CYC
– 0.3 V or V
CYC
OUT
DDQ
DDQ
/2), undershoot: V
IN
OH
OH
OL
OL
+ 0.5 V
 V
= 8.0 mA
= 1.0 mA
= 0 mA,
= –4.0 mA
= –1.0 mA
, output disabled
Test Conditions
DD
IL
, f = f
IN
IN
IN
 0.3 V,
 0.3 V,
 0.3 V,
MAX
IL
(AC) > –2 V (Pulse width less than t
DC input voltage .................................. –0.5 V to V
Current into outputs (LOW) ......................................... 20 mA
Static discharge voltage.......................................... > 2001 V
(per MIL-STD-883, method 3015)
Latch-up current .................................................... > 200 mA
Operating Range
Commercial
Industrial
,
Range
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
All speeds
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
All speeds
IH
< V
DD
and V
–40 °C to +85 °C
0 °C to +70 °C
Temperature
DDQ
Ambient
< V
DD
.
CYC
/2).
3.135
2.375
–0.3
–0.3
Min
–30
2.4
2.0
1.7
2.0
–5
–5
–5
–
–
–
–
–
–
–
–
–
–
–
–
3.3 V5% /
+ 10%
V
DD
V
V
CY7C1338G
DD
DD
Max
V
225
205
3.6
0.4
0.4
0.8
0.7
+ 0.3 V
+ 0.3 V
30
90
80
40
75
65
45
–
–
5
–
5
–
5
DD
DD
2.5 V – 5%
Page 9 of 21
to V
+ 0.5 V
V
DDQ
Unit
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
DD
V
V
V
V
V
V
V
V
V
V
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