BFR30,235 NXP Semiconductors, BFR30,235 Datasheet - Page 3

• Manufacturer Part Number: BFR30,235
• Description: TRANS JFET N-CH 25V 10MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR30,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 4mA @ 10V
• Drain To Source Voltage (vdss): 25V
• Current Drain (id) - Max: 10mA
• Fet Type: N-Channel
• Voltage - Cutoff (vgs Off) @ Id: 5V @ 0.5nA
• Input Capacitance (ciss) @ Vds: 4pF @ 10V
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: + / - 25 V
• Gate-source Breakdown Voltage: - 25 V
• Drain Current (idss At Vgs=0): 10 mA
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Mounted on a ceramic substrate of 8  10  0.7 mm.
THERMAL CHARACTERISTICS
Note
1. Mounted on a ceramic substrate of 8  10  0.7 mm.
1997 Dec 05
handbook, halfpage
V
V
V
I
I
P
T
T
R
SYMBOL
SYMBOL
D
G
stg
j
DS
DGO
GSO
tot
N-channel field-effect transistors
th j-a
(mW)
P tot
300
200
100
0
0
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to ambient
Fig.2 Power derating curve.
40
PARAMETER
80
PARAMETER
120
160
T amb (°C)
MDA245
200
open source
open drain
T
amb
 40 C; note 1; see Fig.2
3
CONDITIONS
note 1
CONDITIONS






65

MIN.
VALUE
430
BFR30; BFR31
25
25
25
10
5
250
+150
150
Product specification
MAX.
UNIT
K/W
V
V
V
mA
mA
mW
C
C
UNIT