BFR30,235 NXP Semiconductors, BFR30,235 Datasheet - Page 5

• Manufacturer Part Number: BFR30,235
• Description: TRANS JFET N-CH 25V 10MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR30,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 4mA @ 10V
• Drain To Source Voltage (vdss): 25V
• Current Drain (id) - Max: 10mA
• Fet Type: N-Channel
• Voltage - Cutoff (vgs Off) @ Id: 5V @ 0.5nA
• Input Capacitance (ciss) @ Vds: 4pF @ 10V
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: + / - 25 V
• Gate-source Breakdown Voltage: - 25 V
• Drain Current (idss At Vgs=0): 10 mA
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
1997 Dec 05
handbook, halfpage
handbook, halfpage
N-channel field-effect transistors
BFR30.
V
BFR31.
V
DS
DS
(mA)
(mA)
I D
I D
= 10 V; T
= 10 V; T
10
8
6
4
2
0
5
4
3
2
1
0
−4
−5
j
j
= 25 C.
= 25 C.
Fig.3 Input characteristics.
Fig.5 Input characteristics.
−4
−3
−3
−2
−2
max
typ
min
−1
−1
V GS (V)
max
min
typ
V GS (V)
MDA657
MDA659
0
0
5
handbook, halfpage
handbook, halfpage
BFR30.
T
BFR31.
T
j
j
= 25 C.
= 25 C.
(mA)
(mA)
I D
I D
Fig.4 Output characteristics; typical values.
Fig.6 Output characteristics; typical values.
10
8
6
4
2
0
5
4
3
2
1
0
0
0
2
2
4
4
BFR30; BFR31
6
6
Product specification
V GS = 0 V
V GS = 0 V
8
8
V DS (V)
V DS (V)
−0.5
−1.0
−1.5
−2.0
−0.2
−0.4
−0.6
−0.8
−1.2
MDA658
MDA660
−1
10
10