BFR30,235 NXP Semiconductors, BFR30,235 Datasheet - Page 5
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BFR30,235
Manufacturer Part Number
BFR30,235
Description
TRANS JFET N-CH 25V 10MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR31235.pdf
(13 pages)
Specifications of BFR30,235
Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
4mA @ 10V
Drain To Source Voltage (vdss)
25V
Current Drain (id) - Max
10mA
Fet Type
N-Channel
Voltage - Cutoff (vgs Off) @ Id
5V @ 0.5nA
Input Capacitance (ciss) @ Vds
4pF @ 10V
Mounting Type
Surface Mount
Power - Max
250mW
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Drain Source Voltage Vds
+ / - 25 V
Gate-source Breakdown Voltage
- 25 V
Drain Current (idss At Vgs=0)
10 mA
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
1997 Dec 05
handbook, halfpage
handbook, halfpage
N-channel field-effect transistors
BFR30.
V
BFR31.
V
DS
DS
(mA)
(mA)
I D
I D
= 10 V; T
= 10 V; T
10
8
6
4
2
0
5
4
3
2
1
0
−4
−5
j
j
= 25 C.
= 25 C.
Fig.3 Input characteristics.
Fig.5 Input characteristics.
−4
−3
−3
−2
−2
max
typ
min
−1
−1
V GS (V)
max
min
typ
V GS (V)
MDA657
MDA659
0
0
5
handbook, halfpage
handbook, halfpage
BFR30.
T
BFR31.
T
j
j
= 25 C.
= 25 C.
(mA)
(mA)
I D
I D
Fig.4 Output characteristics; typical values.
Fig.6 Output characteristics; typical values.
10
8
6
4
2
0
5
4
3
2
1
0
0
0
2
2
4
4
BFR30; BFR31
6
6
Product specification
V GS = 0 V
V GS = 0 V
8
8
V DS (V)
V DS (V)
−0.5
−1.0
−1.5
−2.0
−0.2
−0.4
−0.6
−0.8
−1.2
MDA658
MDA660
−1
10
10