BFR30,235 NXP Semiconductors, BFR30,235 Datasheet - Page 7
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BFR30,235
Manufacturer Part Number
BFR30,235
Description
TRANS JFET N-CH 25V 10MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR31235.pdf
(13 pages)
Specifications of BFR30,235
Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
4mA @ 10V
Drain To Source Voltage (vdss)
25V
Current Drain (id) - Max
10mA
Fet Type
N-Channel
Voltage - Cutoff (vgs Off) @ Id
5V @ 0.5nA
Input Capacitance (ciss) @ Vds
4pF @ 10V
Mounting Type
Surface Mount
Power - Max
250mW
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Drain Source Voltage Vds
+ / - 25 V
Gate-source Breakdown Voltage
- 25 V
Drain Current (idss At Vgs=0)
10 mA
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
1997 Dec 05
handbook, halfpage
handbook, halfpage
N-channel field-effect transistors
Fig.13 Common source output admittance as a
V
Fig.11 Common source transfer admittance as a
f = 1 kHz; T
(1) I
(mA/V)
(μA/V)
DS
|y os |
y fs
7.5
2.5
10
10
10
= 10 V; f = 1 kHz; T
D
10
5
0
4
3
2
= 4 mA. (2) I
0
0
function of drain-source voltage;
typical values.
function of drain current; typical values.
amb
= 25 C.
(1)
(2)
D
= 1 mA.
amb
10
2
= 25 C.
BFR31
BFR30
20
4
I D (mA)
V DS (V)
BFR30
BFR31
MDA664
MDA666
30
6
7
handbook, halfpage
handbook, halfpage
V
V
(μA/V)
DS
DS
Fig.12 Common source output admittance as a
y os
(pF)
C is
= 10 V; f = 1 kHz; T
= 10 V; f = 1 MHz; T
Fig.14 Input capacitance as a function of
75
50
25
0
5
4
3
2
1
0
0
0
function of drain current; typical values.
gate-source voltage; typical values.
−1
amb
amb
2
= 25 C.
−2
= 25 C.
BFR30
BFR31
BFR30; BFR31
−3
4
Product specification
I D (mA)
−4
V GS (V)
MDA665
MDA667
−5
6