BT136B-800E /T3 NXP Semiconductors, BT136B-800E /T3 Datasheet - Page 5
![Triacs TAPE13 TRIAC](/photos/16/4/160465/to3_sml.jpg)
BT136B-800E /T3
Manufacturer Part Number
BT136B-800E /T3
Description
Triacs TAPE13 TRIAC
Manufacturer
NXP Semiconductors
Datasheet
1.BT136B-800E_T3.pdf
(14 pages)
Specifications of BT136B-800E /T3
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
27 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
25 mA
Holding Current (ih Max)
15 mA
Forward Voltage Drop
1.7 V @ 5 A
Mounting Style
SMD/SMT
Package / Case
SOT-404
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT136B-800E,118
NXP Semiconductors
BT136B-800E
Product data sheet
Fig 5.
I
TSM
(A)
10
10
10
3
2
10
t
(1) dI
(2) T2- G+ quadrant limit
Non-repetitive peak on-state current as a function of pulse width; maximum values
p
5
≤ 20 ms
T
/dt limit
(2)
(1)
10
4
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 31 March 2011
10
3
10
2
BT136B-800E
I
T
T
j(init)
t
p
(s)
= 25 C max
t
p
© NXP B.V. 2011. All rights reserved.
003aae829
I
TSM
t
10
4Q Triac
1
5 of 14