BTH151S-650R /T3 NXP Semiconductors, BTH151S-650R /T3 Datasheet - Page 3

• Manufacturer Part Number: BTH151S-650R /T3
• Description: SCRs TAPE13 TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BTH151S-650R /T3

• Breakover Current Ibo Max: 121 A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTH151S-650R,118

Philips Semiconductors
Thyristor
High Repetitive Surge
March 2001
Fig.2. Maximum on-state dissipation, P
10
15
Fig.3. Maximum permissible rms current I
Fig.4. Maximum permissible rms current I
15
10
5
0
5
0
1000
0
-50
Ptot / W
100
IT(RMS) / A
10
conduction
angle
degrees
10us
versus mounting base temperature T
versus mounting base temperature T
120
180
average on-state current, I
ITSM / A
30
60
90
I
1
T
Tj initial = 25 C max
dI /dt limit
T
form
factor
a = form factor = I
4
2.8
2.2
1.9
1.57
a
T
2
0
I TSM
time
100us
3
4
IF(AV) / A
Tmb / C
4
50
T / s
2.8
T(RMS)
5
1ms
2.2
T(AV)
/ I
6
T(AV)
100
, where
Tmb(max) / C
1.9
103 C
.
tot
a = 1.57
7
, versus
mb
mb
T(RMS)
T(RMS)
.
.
10ms
150
8
125
107
116
98
,
,
3
Fig.6. Maximum permissible repetitive rms on-state
current I
V
on-state current I
Fig.5. Maximum permissible non-repetitive peak
GT
120
100
1.6
1.4
1.2
0.8
0.6
0.4
25
20
15
10
80
60
40
20
5
0
0.01
1
0
(T
-50
1
1
ITSM / A
IT(RMS) / A
VGT(25 C)
j
VGT(Tj)
Fig.7. Normalised gate trigger voltage
)/ V
T(RMS)
currents, f = 50 Hz; T
GT
sinusoidal currents, f = 50 Hz.
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
Number of half cycles at 50Hz
TSM
0.1
10
surge duration / s
, versus number of cycles, for
Tj / C
50
BTH151S-650R
mb
I
T
Tj initial = 25 C max
100
Product specification
1
T
103˚C.
100
I TSM
time
Rev 1.001
1000
150
10
j
.