BTH151S-650R /T3 NXP Semiconductors, BTH151S-650R /T3 Datasheet - Page 5

• Manufacturer Part Number: BTH151S-650R /T3
• Description: SCRs TAPE13 TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BTH151S-650R /T3

• Breakover Current Ibo Max: 121 A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTH151S-650R,118

Philips Semiconductors
Thyristor
High Repetitive Surge
MECHANICAL DATA
MOUNTING INSTRUCTIONS
Notes
1. Plastic meets UL94 V0 at 1/8".
March 2001
Dimensions in mm
Net Mass: 1.1 g
Dimensions in mm
2.285 (x2)
1
Fig.15. SOT428 : minimum pad sizes for surface mounting.
6.73 max
tab
2
Fig.14. SOT428 : centre pin connected to tab.
3
0.8 max
(x2)
2.15
2.5
6.22 max
7.0
1.1
0.5 min
5
10.4 max
2.38 max
0.93 max
4.57
7.0
0.3
0.5
seating plane
1.5
4 min
4.6
0.5
BTH151S-650R
Product specification
5.4
Rev 1.001