BTH151S-650R /T3 NXP Semiconductors, BTH151S-650R /T3 Datasheet - Page 4

• Manufacturer Part Number: BTH151S-650R /T3
• Description: SCRs TAPE13 TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BTH151S-650R /T3

• Breakover Current Ibo Max: 121 A
• Rated Repetitive Off-state Voltage Vdrm: 650 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTH151S-650R,118

Philips Semiconductors
Thyristor
High Repetitive Surge
March 2001
Fig.10. Normalised holding current I
Fig.9. Normalised latching current I
2.5
1.5
0.5
2.5
1.5
0.5
I
2.5
1.5
0.5
GT
3
2
1
0
3
2
1
0
3
2
1
0
-50
-50
-50
(T
IGT(25 C)
IL(25 C)
IH(25 C)
IGT(Tj)
IL(Tj)
IH(Tj)
Fig.8. Normalised gate trigger current
j
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
BT145
Tj / C
Tj / C
Tj / C
50
50
50
100
100
100
L
H
(T
(T
j
)/ I
j
j
j
.
.
)/ I
L
H
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.13. Typical, critical rate of rise of off-state voltage,
Fig.11. Typical and maximum on-state characteristic.
Fig.12. Transient thermal impedance Z
10000
1000
30
25
20
15
10
0.001
100
5
0
0.01
10
0.1
0
10
10us
IT / A
1
Rs = 0.0304 ohms
0
Tj = 125 C
dV
Vo = 1.06 V
dVD/dt (V/us)
Tj = 25 C
Zth j-mb (K/W)
D
/dt versus junction temperature T
0.1ms
0.5
pulse width t
1ms
50
tp / s
VT / V
10ms
Tj / C
1
P
D
BTH151S-650R
typ
p
.
0.1s
Product specification
100
t p
1.5
RGK = 100 Ohms
gate open circuit
th j-mb
1s
max
t
Rev 1.001
, versus
j
.
10s
150
2