NE334S01 NEC, NE334S01 Datasheet
NE334S01
Specifications of NE334S01
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NE334S01 Summary of contents
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... TAPE & REEL PACKAGING OPTION AVAILABLE • LOW COST PLASTIC PACKAGE DESCRIPTION The NE334S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high asso- ciated gain make it suitable for TVRO and other commercial systems ...
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ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DS V Gate to Source Voltage GS I Drain Current DS T Channel Temperature CH T Storage Temperature STG P Total Power Dissipation T Note: 1. Operation in excess of ...
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TYPICAL COMMON SOURCE SCATTERING PARAMETERS j50 j25 j10 18 GHz 0 -j10 -j25 -j50 FREQUENCY S 11 (GHz) MAG ANG 0.1 1.002 -2.0 0.5 0.996 -9.7 1.0 0.981 -19.2 1.5 ...
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... NE334S01 TYPICAL COMMON SOURCE SCATTERING PARAMETERS 1.0 0.5 18 GHz 0 2 GHz -0.5 -1 FREQUENCY S 11 (GHz) MAG ANG 2.0 .998 -41.7 2.5 .927 -47.5 3.0 .860 -61.3 3.5 .829 -69.9 4.0 .802 -79.2 4.5 .716 -87.5 5.0 .659 -93.9 5.5 .601 -99.7 6 ...
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... NE334S01 ( +90˚ +45˚ +135˚ S12 + 180˚ – 1 GHz S21 1 GHz 18 GHz 18 GHz -45˚ -135˚ -90˚ MAG ...
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... CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE ORDERING INFORMATION PART NUMBER NE334S01 NE334S01-T1 NE334S01-T1B 4 1. Source 2. Drain 3. Source 4. Gate RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS ...