NE334S01 NEC, NE334S01 Datasheet - Page 6

• Manufacturer Part Number: NE334S01
• Description: RF GaAs Low Noise HJ FET
• Manufacturer: NEC

Specifications of NE334S01

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 85 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 80 mA
• Power Dissipation: 300 mW
• Package / Case: SO-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NE334S01
OUTLINE DIMENSIONS
DATA SUBJECT TO CHANGE WITHOUT NOTICE
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • [phone] • Telex 34-6393 • FAX [phone]
0.125
EXCLUSIVE NORTH AMERICAN AGENT FOR
2
0.05
PACKAGE OUTLINE S01
0.65 TYP.
1
2.0
1.9
4.0
C
1.6
0.2
0.2
0.2
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
3
0.4 MAX
(Units in mm)
4
1. Source
2. Drain
3. Source
4. Gate
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
ORDERING INFORMATION
PART NUMBER
NE334S01
NE334S01-T1
NE334S01-T1B
Tape & reel 1K/reel
Tape & reel 4K/reel
AVAILABILITY
Bulk
PACKAGE
S01
S01
S01
7/18/2000