BFG10W/X T/R NXP Semiconductors, BFG10W/X T/R Datasheet - Page 11

RF Bipolar Small Signal TAPE-7 TNS-RFSS

BFG10W/X T/R

Manufacturer Part Number
BFG10W/X T/R
Description
RF Bipolar Small Signal TAPE-7 TNS-RFSS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFG10W/X T/R

Dc Collector/base Gain Hfe Min
25
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
10 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
0.25 A
Power Dissipation
400 mW
Maximum Operating Temperature
+ 175 C
Package / Case
SOT-343
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFG10W/X,115
Printed in The Netherlands
© NXP B.V. 2010
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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
R77/01/pp11
Date of release: 1995 Sep 22

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