BFG10W/X T/R NXP Semiconductors, BFG10W/X T/R Datasheet - Page 5

• Manufacturer Part Number: BFG10W/X T/R
• Description: RF Bipolar Small Signal TAPE-7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG10W/X T/R

• Dc Collector/base Gain Hfe Min: 25
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.25 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG10W/X,115

NXP Semiconductors
APPLICATION INFORMATION
RF performance at T
Ruggedness in class-AB operation
The BFG10W/X is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under
pulsed conditions up to a supply voltage of 8.6 V under the conditions: 900 MHz; 650 mW; t
and up to a supply voltage of 5.5 V under the conditions: 1.9 GHz; 200 mW; t
1995 Sep 22
handbook, halfpage
Pulsed, class-AB, duty cycle: < 1 : 2; t
Pulsed, class-AB, duty cycle: < 1 : 8; t
UHF power transistor
Pulsed, class-AB operation.
V
Circuit optimized for P
CE
(dB)
G p
Fig.4
= 3.6 V; f = 1.9 GHz; duty cycle < 1 : 2.
10
8
6
4
2
0
0
MODE OF OPERATION
of load power; typical values.
Power gain and efficiency as functions
100
L
= 200 mW.
amb
200
= 25 C in a common-emitter test circuit.
300
G p
η
p
p
c
400
= 10 ms
= 5 ms
P (mW)
L
MLC820
500
100
80
60
40
20
0
(%)
η
(GHz)
c
1.9
0.9
0.9
f
5
handbook, halfpage
Pulsed, class-AB operation.
V
Circuit optimized for P
CE
(dB)
G p
V
3.6
Fig.5
(V)
= 6 V; f = 900 MHz; duty cycle < 1 : 8.
6
6
CE
16
12
8
4
0
0.3
Power gain and efficiency as functions
of load power; typical values.
p
= 10 ms; duty cycle of 1 : 2.
(mW)
0.5
200
650
360
P
L
L
= 600 mW.
G p
η
c
0.7
p
5; typ. 7
= 4.6 ms; duty cycle of 1 : 8
12.5
(dB)
10
G
p
Product specification
0.9
BFG10W/X
P (mW)
L
MBG194
50; typ. 60
1.1
50
50
(%)

80
60
40
20
20
c
(%)
η
c