BFG10W/X T/R NXP Semiconductors, BFG10W/X T/R Datasheet - Page 8

• Manufacturer Part Number: BFG10W/X T/R
• Description: RF Bipolar Small Signal TAPE-7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG10W/X T/R

• Dc Collector/base Gain Hfe Min: 25
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.25 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG10W/X,115

NXP Semiconductors
PACKAGE OUTLINE
1995 Sep 22
UHF power transistor
Plastic surface-mounted package; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT343N
1.1
0.8
A
max
0.1
A 1
4
1
0.4
0.3
b p
y
IEC
b 1
0.7
0.5
b 1
D
e
e 1
0.25
0.10
c
JEDEC
b p
2.2
1.8
D
3
2
REFERENCES
0
1.35
1.15
E
w
B
M
B
1.3
e
scale
EIAJ
8
1
1.15
e 1
A
2.2
2.0
H E
A 1
2 mm
0.45
0.15
L p
0.23
0.13
H E
Q
E
detail X
0.2
PROJECTION
v
EUROPEAN
L p
0.2
w
A
Q
c
0.1
Product specification
y
BFG10W/X
v
X
ISSUE DATE
M
97-05-21
06-03-16
A
SOT343N