BLF546 NXP Semiconductors, BLF546 Datasheet - Page 3

• Manufacturer Part Number: BLF546
• Description: RF MOSFET Power BULK TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF546

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.6 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 145 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-268-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF546,112

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
2003 Sep 22
handbook, halfpage
Per transistor section (unless otherwise specified)
V
V
I
P
T
T
R
R
D
stg
j
DS
GS
tot
th j-mb
th mb-h
UHF push-pull power MOS transistor
SYMBOL
SYMBOL
(1) Current in this area may be limited by R
(2) T
Total device; both sections equally loaded.
(A)
10
I D
10
mb
1
2
1
= 25 C.
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
(1)
Fig.2 DC SOAR.
10
PARAMETER
PARAMETER
(2)
DSon
V DS (V)
.
MRA995
10
2
T
both sections equally loaded
total device;
both sections equally loaded
total device;
both sections equally loaded
mb
3
handbook, halfpage
25 C; total device;
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
P tot
(W)
CONDITIONS
CONDITIONS
200
160
120
80
40
0
0
Fig.3 Power derating curves.
40
(2)
(1)
80
MIN.
65
VALUE
0.25
1.2
Product specification
120
T h ( C)
65
9
145
150
200
MAX.
20
BLF546
MDA519
160
UNIT
K/W
K/W
V
V
A
W
UNIT
C
C