BLF546 NXP Semiconductors, BLF546 Datasheet - Page 5

• Manufacturer Part Number: BLF546
• Description: RF MOSFET Power BULK TNS-RFPR
• Manufacturer: NXP Semiconductors

Specifications of BLF546

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.6 Ohms
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A
• Power Dissipation: 145 W
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-268-5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF546,112

Philips Semiconductors
2003 Sep 22
handbook, halfpage
handbook, halfpage
UHF push-pull power MOS transistor
V
Fig.4
I
Fig.6
R DSon
(mV/K)
D
DS
T.C.
( )
= 2.4 A; V
0.8
0.6
0.4
0.2
= 10 V.
12
0
8
4
0
10
4
0
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
2
GS
= 10 V.
40
10
1
80
1
120
I D (A)
T j ( C)
MDA522
MDA520
160
10
5
handbook, halfpage
handbook, halfpage
V
Fig.5
V
Fig.7
DS
GS
(pF)
250
200
150
100
(A)
I D
= 10 V; T
= 0; f = 1 MHz.
C
12
50
8
4
0
0
0
1
Drain current as a function of gate-source
voltage; typical values per section.
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
j
= 25 C.
10
4
20
8
Product specification
12
30
C is
C os
V GS (V)
V DS (V)
BLF546
MDA521
MDA523
16
40