BLF6G20-45 /T3 NXP Semiconductors, BLF6G20-45 /T3 Datasheet - Page 3

• Manufacturer Part Number: BLF6G20-45 /T3
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-45 /T3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2.5W(Typ)
• Power Gain (typ)@vds: 19.2@28VdB
• Frequency (min): 1.805GHz
• Frequency (max): 2GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 5S
• Drain Source Resistance (max): 200(Typ)@6.15Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 14%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G20-45,135

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLF6G20-45_BLF6G20S-45_2
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
RF performance at V
class-AB production test circuit.
The BLF6G20-45 and BLF6G20S-45 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol
R
Symbol Parameter
V
V
V
I
I
I
g
R
Symbol
G
RL
ACPR
DSS
DSX
GSS
j
fs
DS
D
(BR)DSS
GS(th)
GSq
th(j-case)
DS(on)
p
= 25 C per section; unless otherwise specified.
in
= 28 V; I
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Parameter
thermal resistance from junction to case
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
Thermal characteristics
Characteristics
Application information
Dq
= 360 mA; P
DS
= 28 V; I
Rev. 02 — 25 August 2008
1
= 1802.5 MHz; f
L
Dq
= 45 W (CW); f = 1880 MHz.
BLF6G20-45; BLF6G20S-45
= 360 mA; T
Conditions
V
V
V
V
V
V
V
V
I
D
2
GS
DS
DS
GS
GS
DS
GS
DS
GS
= 2.5 A
= 1807.5 MHz; f
case
= 10 V; I
= 28 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
Conditions
P
P
P
P
GS(th)
GS(th)
L(AV)
L(AV)
L(AV)
L(AV)
= 25 C; unless otherwise specified; in a
Conditions
T
D
case
DS
D
D
D
= 2.5 W
= 2.5 W
= 2.5 W
= 2.5 W
= 0.5 mA
+ 3.75 V;
+ 3.75 V;
DS
= 72 mA
= 300 mA
= 3.6 A
= 28 V
= 80 C; P
= 0 V
3
= 1872.5 MHz; f
L(AV)
Power LDMOS transistor
Min
18.3
-
12
-
Min
65
1.4
1.70
-
-
-
-
-
= 12.5 W
Typ
19.2
14
Typ
-
1.9
2.30
-
12.5
-
5
0.2
© NXP B.V. 2008. All rights reserved.
10
50
4
= 1877.5 MHz;
Max
20.8
-
Max
-
2.4
2.79
1.5
-
150
-
-
6.5
46
Typ Unit
1.7
3 of 12
Unit
dB
dB
%
dBc
K/W
Unit
V
V
V
A
nA
S
A