BLF6G20-45 /T3 NXP Semiconductors, BLF6G20-45 /T3 Datasheet - Page 4

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BLF6G20-45 /T3

Manufacturer Part Number
BLF6G20-45 /T3
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G20-45 /T3

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
13 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
CDFM
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
2.5W(Typ)
Power Gain (typ)@vds
19.2@28VdB
Frequency (min)
1.805GHz
Frequency (max)
2GHz
Package Type
CDFM
Pin Count
3
Forward Transconductance (typ)
5S
Drain Source Resistance (max)
200(Typ)@6.15Vmohm
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
14%
Mounting
Screw
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G20-45,135
NXP Semiconductors
BLF6G20-45_BLF6G20S-45_2
Product data sheet
Fig 1.
Fig 2.
(dB)
G
p
21
19
17
15
0
V
One-tone CW power gain and drain efficiency as functions of load power; typical values
V
MHz.
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
DS
DS
= 28 V; I
= 28 V; I
G
D
p
5
Dq
Dq
= 360 mA; f = 1842 MHz.
= 360 mA; f
10
15
1
= 1843 MHz; f
(dB)
G
p
22
20
18
16
14
12
0
20
P
001aah546
L(PEP)
G
D
p
2
(W)
10
Rev. 02 — 25 August 2008
= 1843.1
25
60
40
20
0
(%)
D
20
BLF6G20-45; BLF6G20S-45
Fig 3.
30
(dBc)
IMD
20
40
60
80
0
V
MHz.
Two-tone CW intermodulation distortion as a
function of peak envelope load power;
typical values
40
DS
001aah545
P
L
= 28 V; I
(W)
5
50
60
50
40
30
20
10
Dq
(%)
D
= 360 mA; f
10
IMD3
IMD5
IMD7
Power LDMOS transistor
15
1
= 1843 MHz; f
© NXP B.V. 2008. All rights reserved.
20
P
001aah547
L(PEP)
2
(W)
25
= 1843.1
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