BLF6G27LS-135 NXP Semiconductors, BLF6G27LS-135 Datasheet - Page 2

• Manufacturer Part Number: BLF6G27LS-135
• Description: RF MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27LS-135

• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.135 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 34 A
• Maximum Operating Temperature: + 200 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27LS-135,112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF6G27-135_BLF6G27LS-135_2
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
BLF6G27-135 (SOT502A)
1
2
3
BLF6G27LS-135 (SOT502B)
1
2
3
Type number
BLF6G27-135
BLF6G27LS-135
Symbol
V
V
I
T
T
Symbol
R
D
stg
j
DS
GS
th(j-case)
Connected to flange.
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
thermal resistance from
junction to case
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
drain
gate
source
Package
Name
-
-
BLF6G27-135; BLF6G27LS-135
Rev. 02 — 26 May 2008
Description
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Conditions
T
P
case
L
= 135 W (CW)
= 80 C;
Conditions
[1]
[1]
Simplified outline
Type
BLF6G27-135
BLF6G27LS-135
WiMAX power LDMOS transistor
1
2
1
2
3
Min
-
-
-
0.5
65
3
Graphic symbol
© NXP B.V. 2008. All rights reserved.
Max
65
+13
34
+150
200
Typ
0.5
0.45
2
2
sym112
sym112
Version
SOT502A
SOT502B
1
3
1
3
Unit
V
V
A
C
C
Unit
K/W
K/W
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