BLF6G27LS-135 NXP Semiconductors, BLF6G27LS-135 Datasheet - Page 6

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BLF6G27LS-135

Manufacturer Part Number
BLF6G27LS-135
Description
RF MOSFET Power LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G27LS-135

Minimum Operating Temperature
- 65 C
Mounting Style
Screw
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.135 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
34 A
Maximum Operating Temperature
+ 200 C
Package / Case
LDMOST-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G27LS-135,112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF6G27LS-135
Manufacturer:
NXP
Quantity:
1 000
NXP Semiconductors
BLF6G27-135_BLF6G27LS-135_2
Product data sheet
Fig 6.
Fig 8.
(dB)
G
(dB)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
G
p
19
18
17
16
15
14
13
17
p
16
15
14
1
1
V
N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel
Bandwidth = 1.23 MHz; IBW = 30 kHz.
Power gain and drain efficiency as functions of
load power; typical values
V
PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth
= 1.23 MHz; IBW = 30 kHz.
Power gain as function of load power; typical
values
DS
DS
G
D
= 32 V; I
= 32 V; I
p
Dq
Dq
= 1200 mA; f = 2600 MHz; Single Carrier
= 1200 mA; Single Carrier N-CDMA;
10
10
(3)
(2)
(1)
P
P
L
L
(W)
(W)
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BLF6G27-135; BLF6G27LS-135
Rev. 02 — 26 May 2008
2
2
42
35
28
21
14
7
0
(%)
D
Fig 7.
Fig 9.
ACPR
(dBc)
(1) Low frequency component
(2) High frequency component
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
(W)
P
35
45
55
65
75
85
i
3
2
1
0
1
V
N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel
Bandwidth = 1.23 MHz; IBW = 30 kHz.
Adjacent channel power ratio as function of
load power; typical values
1
V
PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth
= 1.23 MHz; IBW = 30 kHz.
Input power as function of load power; typical
values
DS
DS
ACPR
ACPR
ACPR
= 32 V; I
= 32 V; I
1500k
1980k
885k
Dq
Dq
WiMAX power LDMOS transistor
= 1200 mA; f = 2600 MHz; Single Carrier
= 1200 mA; Single Carrier N-CDMA;
(1)
(2)
(2)
(1)
(1)
(2)
10
10
P
P
L
L
(1)
(2)
(3)
(W)
(W)
© NXP B.V. 2008. All rights reserved.
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10
2
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