BLF6G27LS-135 NXP Semiconductors, BLF6G27LS-135 Datasheet - Page 8

• Manufacturer Part Number: BLF6G27LS-135
• Description: RF MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27LS-135

• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.135 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 34 A
• Maximum Operating Temperature: + 200 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27LS-135,112

NXP Semiconductors
BLF6G27-135_BLF6G27LS-135_2
Product data sheet
Table 10.
f
(GHz)
2.5
2.6
2.7
Measured test circuit impedances
BLF6G27-135; BLF6G27LS-135
Rev. 02 — 26 May 2008
Z
( )
1.60 + j1.07
1.38 + j2.08
1.17 + j2.77
i
WiMAX power LDMOS transistor
Z
( )
1.44 + j1.86
1.17 + j2.80
0.97 + j3.41
o
© NXP B.V. 2008. All rights reserved.
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