BLF6G27LS-135 NXP Semiconductors, BLF6G27LS-135 Datasheet - Page 5

• Manufacturer Part Number: BLF6G27LS-135
• Description: RF MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27LS-135

• Minimum Operating Temperature: - 65 C
• Mounting Style: Screw
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.135 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 34 A
• Maximum Operating Temperature: + 200 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27LS-135,112

NXP Semiconductors
BLF6G27-135_BLF6G27LS-135_2
Product data sheet
Fig 4.
(dB)
G
19
p
18
17
16
15
14
13
2500
V
PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz.
Power gain and drain efficiency as functions of
frequency; typical values
DS
= 32 V; I
7.3.1 Graphs
7.3 Single carrier N-CDMA broadband performance at 9 W average
2550
Dq
= 1200 mA; Single Carrier N-CDMA;
Fig 3.
2600
(1)
(2)
(3)
V
Adjacent channel power ratio as function of average load power; typical values
f = 2600 MHz
f = 2600 MHz
f = 2600 MHz
DS
2650
= 32 V; I
G
f (MHz)
001aah644
D
p
Dq
ACPR
(dBc)
2700
= 1200 mA.
20 MHz
30 MHz
10 MHz
BLF6G27-135; BLF6G27LS-135
Rev. 02 — 26 May 2008
20
30
40
50
60
70
25
24
23
22
21
20
19
(%)
0
D
4
Fig 5.
8
ACPR
(dBc)
(1) Low frequency component
(2) High frequency component
45
50
55
60
65
70
75
12
2500
V
PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz.
Adjacent channel power ratio as function of
frequency; typical values
DS
16
= 32 V; I
2550
20
Dq
(1)
(2)
(2)
(1)
(2)
(1)
WiMAX power LDMOS transistor
(1)
(2)
(3)
P
= 1200 mA; Single Carrier N-CDMA;
001aah643
L(AV)
24
ACPR
ACPR
ACPR
2600
(W)
1500k
1980k
28
885k
2650
© NXP B.V. 2008. All rights reserved.
f (MHz)
001aah645
2700
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