BF245C NXP Semiconductors, BF245C Datasheet
BF245C
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BF245C Summary of contents
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... DATA SHEET BF245A; BF245B; BF245C N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 DISCRETE SEMICONDUCTORS 1996 Jul 30 ...
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... C T amb kHz; T amb = 1 V; MHz; T amb 2 Product specification BF245A; BF245B; BF245C DESCRIPTION drain source gate g MAM257 MIN. TYP. MAX. UNIT 30 V 8 V 30 V 6.5 mA 300 mW 6.5 mS ...
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... T amb PARAMETER CONDITIONS = 1 nA 200 300 s; 0.02 BF245A; BF245B; BF245C MIN. 65 CONDITIONS VALUE in free air 250 200 MIN. 0. 0.4 1.6 ...
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... DS GS value at 1 kHz 100 MHz k (common source); G input tuned to minimum noise MGE785 handbook, halfpage 100 150 T j (° Product specification BF245A; BF245B; BF245C MIN. TYP. MAX. 4 1.1 1.6 250 40 3 6 1.4 25 ...
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... MBH555 handbook, halfpage −0.5 V −1 V −1 ( MBH553 handbook, halfpage −0.5 V −1 V −1.5 V −2 V −2 ( Product specification BF245A; BF245B; BF245C (mA −4 − ( Fig.5 Transfer characteristics for BF245B; typical values (mA −10 − ( Fig.7 Transfer characteristics for BF245C; typical values. MGE787 0 MGE788 0 ...
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... Fig.11 Drain current as a function of junction 6 Product specification BF245A; BF245B; BF245C (mA 100 = 15 V. Drain current as a function of junction temperature; typical values for BF245A 100 = 15 V. temperature; typical values for BF245C. MGE775 −0.5 V −1 V −1.5 V 150 T j (°C) MGE779 −2 V −4 V 150 T j (°C) ...
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... DS GS amb Fig.14 Common-source forward transfer admittance as a function of frequency; typical values. 1996 Jul 30 MGE778 2 10 handbook, halfpage (mA/ − (MHz) MGE782 handbook, halfpage (MHz) 7 BF245A; BF245B; BF245C (μA/ amb Fig.13 Common source reverse admittance as a function of frequency; typical values (μA/V) ...
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... V GS (V) V Fig.17 Reverse transfer capacitance as a function MGE791 handbook, halfpage BF245C (mA) V Fig.19 Gate-source cut-off voltage as a function of 8 BF245A; BF245B; BF245C 1 (pF) typ 1 0.5 −2 −4 − MHz amb of gate-source voltage; typical values. −10 ...
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... kHz amb Fig.20 Drain-source on-state resistance as a function of gate-source voltage; typical values. 1996 Jul 30 MGE790 handbook, halfpage BF245B BF245C −3 − (V) 9 BF245A; BF245B; BF245C 3 F (dB k amb Input tuned to minimum noise. Fig.21 Noise figure as a function of frequency; ...
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... Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION IEC SOT54 variant 1996 Jul 2.5 scale 4.8 1.7 4.2 2.54 1.27 4.4 1.4 3.6 REFERENCES JEDEC JEITA 10 Product specification BF245A; BF245B; BF245C ( max max 14.5 2.5 2.5 12.7 EUROPEAN PROJECTION SOT54 variant ISSUE DATE 04-06-28 05-01-10 ...
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... Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 11 Product specification BF245A; BF245B; BF245C DEFINITION ...
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... Jul 30 BF245A; BF245B; BF245C Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...