BF245C NXP Semiconductors, BF245C Datasheet - Page 5

• Manufacturer Part Number: BF245C
• Description: RF JFET BULK FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF245C

• Configuration: Single
• Mounting Style: Through Hole
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: - 30 V
• Maximum Drain Gate Voltage: - 30 V
• Continuous Drain Current: 25 mA
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF245C,112

NXP Semiconductors
1996 Jul 30
handbook, halfpage
handbook, halfpage
N-channel silicon field-effect transistors
V
V
DS
DS
(mA)
= 15 V; T
= 15 V; T
(mA)
Fig.6
I D
Fig.4
I D
15
10
6
5
4
3
2
1
0
5
0
0
0
j
j
= 25 C.
= 25 C.
Output characteristics for BF245B;
typical values.
Output characteristics for BF245A;
typical values.
10
10
V GS = 0 V
V GS = 0 V
V DS (V)
V DS (V)
−0.5 V
−1 V
−1.5 V
−0.5 V
−1 V
−1.5 V
−2.5 V
−2 V
MBH555
MBH553
20
20
5
handbook, halfpage
handbook, halfpage
V
V
DS
DS
= 15 V; T
= 15 V; T
Fig.7
(mA)
Fig.5
(mA)
I D
I D
15
10
30
20
10
5
0
0
−10
−4
j
j
BF245A; BF245B; BF245C
= 25 C.
= 25 C.
Transfer characteristics for BF245B;
typical values.
Transfer characteristics for BF245C;
typical values.
−2
−5
Product specification
V GS (V)
V GS (V)
MGE787
MGE788
0
0