BF245C NXP Semiconductors, BF245C Datasheet - Page 6

• Manufacturer Part Number: BF245C
• Description: RF JFET BULK FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF245C

• Configuration: Single
• Mounting Style: Through Hole
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: - 30 V
• Maximum Drain Gate Voltage: - 30 V
• Continuous Drain Current: 25 mA
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF245C,112

NXP Semiconductors
1996 Jul 30
handbook, halfpage
handbook, halfpage
N-channel silicon field-effect transistors
Fig.10 Drain current as a function of junction
V
V
DS
DS
(mA)
= 15 V; T
= 15 V.
(mA)
I D
Fig.8
I D
15
10
30
20
10
5
0
0
0
0
temperature; typical values for BF245B.
j
= 25 C.
Output characteristics for BF245C;
typical values.
50
10
100
V GS = 0 V
V DS (V)
V GS = 0 V
−1 V
−4 V
−2 V
−3 V
T j (°C)
−1 V
−2 V
MGE776
MBH554
150
20
6
handbook, halfpage
handbook, halfpage
Fig.9
Fig.11 Drain current as a function of junction
V
V
DS
DS
(mA)
I D
(mA)
= 15 V.
= 15 V.
I D
20
16
12
4
3
2
1
0
8
4
0
Drain current as a function of junction
temperature; typical values for BF245A.
0
temperature; typical values for BF245C.
0
BF245A; BF245B; BF245C
50
50
100
100
Product specification
V GS = 0 V
V GS = 0 V
T j (°C)
T j (°C)
−2 V
−4 V
−1.5 V
−0.5 V
MGE775
MGE779
−1 V
150
150