BLF7G22L-130 NXP Semiconductors, BLF7G22L-130 Datasheet - Page 15

RF MOSFET Power 44.8dBm 2110-2170MHz

BLF7G22L-130

Manufacturer Part Number
BLF7G22L-130
Description
RF MOSFET Power 44.8dBm 2110-2170MHz
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF7G22L-130

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934063499112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF7G22L-130N
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
13. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.5
7.6
7.7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Ruggedness in class-AB operation . . . . . . . . . 3
2-carrier W-CDMA (5 MHz carrier spacing) . . . 7
2-carrier W-CDMA (10 MHz carrier spacing) . . 8
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Impedance information . . . . . . . . . . . . . . . . . . . 4
1 Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
BLF7G22L-130; BLF7G22LS-130
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document identifier: BLF7G22L-130_7G22LS-130
Power LDMOS transistor
Date of release: 20 January 2011
All rights reserved.

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