BLF7G22L-130 NXP Semiconductors, BLF7G22L-130 Datasheet - Page 5

• Manufacturer Part Number: BLF7G22L-130
• Description: RF MOSFET Power 44.8dBm 2110-2170MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22L-130

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063499112

NXP Semiconductors
BLF7G22L-130_7G22LS-130
Product data sheet
Fig 2.
Fig 4.
(dB)
G
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
p
19
18
17
16
15
14
0
V
Power gain as a function of load power;
typical values
V
Input return loss as a function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
(1)
(2)
(3)
7.3 1 Tone CW
40
Dq
Dq
= 950 mA.
= 950 mA.
80
RL
(dB)
−10
−20
−30
in
120
0
0
All information provided in this document is subject to legal disclaimers.
P
001aal341
L
(W)
10
BLF7G22L-130; BLF7G22LS-130
160
Rev. 4 — 20 January 2011
20
30
Fig 3.
40
(%)
η
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
D
50
60
40
20
0
0
V
Drain efficiency as a function of load power;
typical values
P
DS
L
001aal352
60
(W)
= 28 V; I
(1)
(2)
(3)
70
40
Dq
= 950 mA.
80
Power LDMOS transistor
(1)
(2)
(3)
120
© NXP B.V. 2011. All rights reserved.
P
001aal342
L
(W)
160
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