BLF7G22L-130 NXP Semiconductors, BLF7G22L-130 Datasheet - Page 8

• Manufacturer Part Number: BLF7G22L-130
• Description: RF MOSFET Power 44.8dBm 2110-2170MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22L-130

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063499112

NXP Semiconductors
BLF7G22L-130_7G22LS-130
Product data sheet
Fig 12. Power gain as a function of load power;
Fig 14. Adjacent channel power ratio (5 MHz) as a
ACPR
(dBc)
(dB)
G
(1) f = 2117.5 MHz
(2) f = 2140 MHz
(3) f = 2162.5 MHz
(1) f = 2117.5 MHz
(2) f = 2140 MHz
(3) f = 2162.5 MHz
−20
−40
−60
p
20
19
18
17
16
15
5M
0
0
V
typical values
0
V
function of load power; typical values
DS
DS
= 28 V; I
= 28 V; I
10
(1)
10
7.6 2-carrier W-CDMA (10 MHz carrier spacing)
20
20
Dq
(2)
Dq
(3)
(2)
(1)
= 950 mA; carrier spacing 10 MHz.
= 950 mA; carrier spacing 10 MHz.
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF.
30
30
(3)
40
40
50
50
All information provided in this document is subject to legal disclaimers.
P
P
L
L
001aal355
001aal357
60
60
(W)
(W)
BLF7G22L-130; BLF7G22LS-130
Rev. 4 — 20 January 2011
70
70
Fig 13. Drain efficiency as a function of load power;
Fig 15. Adjacent channel power ratio (10 MHz) as a
ACPR
(dBc)
(%)
η
(1) f = 2117.5 MHz
(2) f = 2140 MHz
(3) f = 2162.5 MHz
(1) f = 2117.5 MHz
(2) f = 2140 MHz
(3) f = 2162.5 MHz
D
−20
−40
−60
10M
50
40
30
20
10
0
0
0
0
V
typical values
V
function of load power; typical values
DS
DS
(1)
= 28 V; I
= 28 V; I
10
10
(2)
20
20
Dq
Dq
(3)
= 950 mA; carrier spacing 10 MHz.
= 950 mA; carrier spacing 10 MHz.
30
30
Power LDMOS transistor
40
40
50
50
© NXP B.V. 2011. All rights reserved.
(1)
(2)
(3)
P
P
L
L
001aal356
001aal358
60
60
(W)
(W)
70
70
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