BFG590 T/R NXP Semiconductors, BFG590 T/R Datasheet - Page 3

• Manufacturer Part Number: BFG590 T/R
• Description: RF Bipolar Small Signal TAPE7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG590 T/R

• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG590,215

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
THERMAL CHARACTERISTICS
Note
1. T
handbook, halfpage
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
C
stg
j
CBO
CEO
EBO
tot
th j-s
NPN 5 GHz wideband transistors
(mW)
P tot
s
s
600
400
200
is the temperature at the soldering point of the collector pin.
is the temperature at the soldering point of the collector pin.
0
0
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering point
Fig.2 Power derating curve.
50
PARAMETER
100
PARAMETER
150
T
s
MBG249
(
o
C)
open emitter
open base
open collector
T
s
200
Rev. 04 - 12 November 2007
60 C; see Fig.2; note 1
CONDITIONS
T
s
60 C; note 1
CONDITIONS
65
BFG590; BFG590/X
MIN.
20
15
3
200
400
+150
175
VALUE
Product specification
MAX.
290
3 of 11
V
V
V
mA
mW
C
C
UNIT
UNIT
K/W