BFG590 T/R NXP Semiconductors, BFG590 T/R Datasheet - Page 5

• Manufacturer Part Number: BFG590 T/R
• Description: RF Bipolar Small Signal TAPE7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG590 T/R

• Dc Collector/base Gain Hfe Min: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.2 A
• Power Dissipation: 400 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG590,215

NXP Semiconductors
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistors
(GHz)
V
V
f
CE
Fig.3
CE =
T
h FE
250
200
150
100
Fig.5
= 8 V.
50
4 V; f = 1 GHz.
0
0
10
8
6
4
2
10
2
DC current gain as a function of collector
current; typical values.
Transition frequency as a function of
collector current; typical values.
10
1
1
I
C
(mA)
10
I C (mA)
MLC058
MRA749
10
Rev. 04 - 12 November 2007
10
2
2
handbook, halfpage
I
C
(pF)
C re
= 0; f = 1 MHz.
Fig.4
1.2
0.8
0.4
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
2
BFG590; BFG590/X
4
6
Product specification
8
V
CB
MLC057
(V)
5 of 11
10