BFG590 T/R NXP Semiconductors, BFG590 T/R Datasheet - Page 7
![RF Bipolar Small Signal TAPE7 TNS-RFSS](/photos/16/4/160413/sot143_sml.jpg)
BFG590 T/R
Manufacturer Part Number
BFG590 T/R
Description
RF Bipolar Small Signal TAPE7 TNS-RFSS
Manufacturer
NXP Semiconductors
Datasheet
1.BFG590215.pdf
(11 pages)
Specifications of BFG590 T/R
Dc Collector/base Gain Hfe Min
60
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
5000 MHz
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
0.2 A
Power Dissipation
400 mW
Maximum Operating Temperature
+ 175 C
Package / Case
SOT-143
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFG590,215
NXP Semiconductors
handbook, full pagewidth
handbook, full pagewidth
NPN 5 GHz wideband transistors
I
I
C
C
= 80 mA; V
= 80 mA; V
CE
CE
= 4 V; Z
= 4 V.
Fig.11 Common emitter forward transmission coefficient (S
o
= 50
Fig.10 Common emitter input reflection coefficient (S
180
180
o
o
50
0
135
135
135
135
40
0.2
0.2
40 MHz
o
o
o
o
0.2
30
0.5
0.5
Rev. 04 - 12 November 2007
20
3 GHz
0.5
10
90
90
90
90
1
1
1
o
o
o
o
3 GHz
40 MHz
2
2
2
5
11
45
45
45
45
); typical values.
21
o
o
o
o
5
5
MGC805
); typical values.
MGC882
BFG590; BFG590/X
0
0
o
o
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification
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