BLF6G10LS-200R /T3 NXP Semiconductors, BLF6G10LS-200R /T3 Datasheet - Page 2

• Manufacturer Part Number: BLF6G10LS-200R /T3
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G10LS-200R /T3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V to + 13 V
• Continuous Drain Current: 49 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 200W
• Power Gain (typ)@vds: 20@28VdB
• Frequency (min): 869MHz
• Frequency (max): 894MHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 18S
• Drain Source Resistance (max): 60(Typ)@6.15Vmohm
• Reverse Capacitance (typ): 3@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 27%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G10LS-200R,118

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF6G10LS-200R_1
Preliminary data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
Type number
BLF6G10LS-200R -
Symbol
V
V
I
T
T
Symbol
R
D
stg
j
DS
GS
th(j-case)
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 800 MHz to 1000 MHz frequency range.
Connected to flange.
Parameter
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
Package
Name
Rev. 01 — 21 January 2008
Description
earless flanged LDMOST ceramic package; 2 leads
Conditions
[1]
Simplified outline
Conditions
T
BLF6G10LS-200R
case
= 80 C; P
1
2
3
Power LDMOS transistor
L
= 40 W
Symbol
Min
-
-
-
© NXP B.V. 2008. All rights reserved.
0.5
65
2
Max
65
+13
49
+150
225
sym112
Typ
0.35 K/W
Version
SOT502B
1
3
2 of 10
Unit
Unit
V
V
A
C
C