BLF6G20-230PRN NXP Semiconductors, BLF6G20-230PRN Datasheet - Page 4

• Manufacturer Part Number: BLF6G20-230PRN
• Description: RF MOSFET Small Signal 230W, 1800-2000MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-230PRN

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063293112

NXP Semiconductors
7. Application information
BLF6G20-230PRN_20S-230PRN_2
Product data sheet
7.1 Ruggedness in class-AB operation
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
RF performance at V
class-AB production test circuit
Table 8.
Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
I
The BLF6G20-230PRN and BLF6G20S-230PRN are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
Symbol
G
RL
η
ACPR
Symbol Parameter
PAR
Dq
D
p
in
= 2000 mA; T
O
output peak-to-average ratio P
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
Application information
Application information
DS
case
All information provided in this document is subject to legal disclaimers.
= 28 V; I
DS
= 25
= 28 V; I
Rev. 02 — 9 February 2010
°
1
1
Dq
C; unless otherwise specified; in a class-AB production test circuit.
= 1802.5 MHz; f
= 1872.5 MHz; f
= 2000 mA; P
Dq
= 2000 mA; T
Conditions
at 0.01 % probability on CCDF
L(AV)
2
2
L
= 1807.5 MHz; f
= 1877.5 MHz; RF performance at V
= 230 W (CW); f = 1805 MHz.
= 125 W;
case
BLF6G20(S)-230PRN
Conditions
P
P
P
P
L(AV)
L(AV)
L(AV)
L(AV)
= 25
= 65 W
= 65 W
= 65 W
= 65 W
°
C; unless otherwise specified; in a
3
= 1872.5 MHz; f
Power LDMOS transistor
Min
16.3
-
29
-
Min Typ Max Unit
3.5
Typ
−11
−31
© NXP B.V. 2010. All rights reserved.
17.5 18.7
32
4
= 1877.5 MHz;
4.2
DS
= 28 V;
Max
−6.5
-
−27
-
4 of 13
Unit
dB
dB
%
dBc
dB