BLF6G20-230PRN NXP Semiconductors, BLF6G20-230PRN Datasheet - Page 5

• Manufacturer Part Number: BLF6G20-230PRN
• Description: RF MOSFET Small Signal 230W, 1800-2000MHz
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-230PRN

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063293112

NXP Semiconductors
BLF6G20-230PRN_20S-230PRN_2
Product data sheet
7.2.1 One tone CW
7.2 Graphs
Fig 1.
V
One-tone CW power gain and drain efficiency as functions of load power; typical
values
DS
= 28 V; I
All information provided in this document is subject to legal disclaimers.
Dq
(dB)
G
Rev. 02 — 9 February 2010
= 2000 mA.
p
19
17
15
13
11
0
G
η
D
p
100
BLF6G20(S)-230PRN
200
P
L
001aal412
(W)
300
Power LDMOS transistor
60.00
46.66
33.33
20.00
6.66
(%)
η
D
© NXP B.V. 2010. All rights reserved.
5 of 13