BYQ28X-200,127 NXP Semiconductors, BYQ28X-200,127 Datasheet

DIODE RECT UFAST 200V TO220F

BYQ28X-200,127

Manufacturer Part Number
BYQ28X-200,127
Description
DIODE RECT UFAST 200V TO220F
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BYQ28X-200,127

Package / Case
TO-220-3 Full Pack
Voltage - Forward (vf) (max) @ If
1.25V @ 10A
Current - Reverse Leakage @ Vr
10µA @ 200V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
25ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
200 V
Forward Voltage Drop
1.1 V
Recovery Time
25 ns
Forward Continuous Current
10 A
Max Surge Current
55 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Dc
0632
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-3431
934039600127
BYQ28X-200
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Dual ultrafast epitaxial rectifier diodes in a SOT186A (TO-220F) isolated plastic package.
Table 1.
Symbol Parameter
V
I
I
Dynamic characteristics
t
Static characteristics
V
Electrostatic discharge
V
O(AV)
FRM
rr
RRM
F
ESD
Fast switching
Guaranteed ESD capability
High thermal cycling performance
Output rectifiers in high-frequency
switched-mode power supplies
BYQ28X-200
Dual ultrafast rugged rectifier diode
Rev. 02 — 5 February 2009
repetitive peak
reverse voltage
average output
current
repetitive peak
forward current
reverse recovery
time
forward voltage
electrostatic
discharge voltage
Quick reference
Conditions
SQW; δ = 0.5; T
both diodes conducting; see
Figure
SQW; δ = 0.5; t
T
I
dI
T
see
I
Figure 4
HBM; C = 250 pF;
R = 1.5 kΩ; all pins
F
F
h
j
F
= 1 A; V
= 25 °C; ramp recovery;
= 5 A; T
≤ 92 °C; per diode
/dt = 100 A/µs;
Figure 5
1; see
j
R
= 150 °C; see
= 30 V;
Figure 2
p
h
= 25 µs;
≤ 92 °C;
Low on-state losses
Soft recovery minimizes
power-consuming oscillations
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
15
0.8
-
Max
200
10
10
25
0.895 V
8
Unit
V
A
A
ns
kV

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BYQ28X-200,127 Summary of contents

Page 1

... BYQ28X-200 Dual ultrafast rugged rectifier diode Rev. 02 — 5 February 2009 1. Product profile 1.1 General description Dual ultrafast epitaxial rectifier diodes in a SOT186A (TO-220F) isolated plastic package. 1.2 Features and benefits Fast switching Guaranteed ESD capability High thermal cycling performance 1.3 Applications ...

Page 2

... TO-220 "full pack" BYQ28X-200_2 Product data sheet Dual ultrafast rugged rectifier diode Simplified outline SOT186A (TO-220F) Rev. 02 — 5 February 2009 BYQ28X-200 Graphic symbol sym125 Version SOT186A © NXP B.V. 2009. All rights reserved ...

Page 3

... HBM 250 pF 1.5 kΩ; all pins 001aag976 6 δ tot ( (A) F(AV) Fig 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values Rev. 02 — 5 February 2009 BYQ28X-200 Dual ultrafast rugged rectifier diode Min Max Unit - 200 V - 200 V - 200 ...

Page 4

... Conditions 50 Hz < f < 60 Hz; sinusoidal waveform; relative humidity < clean and dust free; from all terminals to external heatsink from cathode to external heatsink MHz Rev. 02 — 5 February 2009 BYQ28X-200 Dual ultrafast rugged rectifier diode Min Typ Max Unit - - 5.7 K K/W ...

Page 5

... A/µ °C; see Figure / A/µ °C; see Figure 7 001aag978 I F (2) ( 1.0 1.5 Fig 5. Reverse recovery definitions; ramp recovery V (V) F Rev. 02 — 5 February 2009 BYQ28X-200 Dual ultrafast rugged rectifier diode Min Typ Max - 1.1 1.25 - 0.8 0.895 - 0.95 1 0.1 0 0.5 0.7 ...

Page 6

... NXP Semiconductors Fig 6. Reverse recovery definitions; step recovery BYQ28X-200_2 Product data sheet Dual ultrafast rugged rectifier diode I F time 0. 003aac563 Fig 7. Forward recovery definitions Rev. 02 — 5 February 2009 BYQ28X-200 time V FRM V F time 001aab912 © NXP B.V. 2009. All rights reserved ...

Page 7

... 2.7 0.7 15.8 6.5 10.3 2.54 5.08 0.4 15.2 6.3 9.7 1.7 REFERENCES JEDEC JEITA 3-lead TO-220F Rev. 02 — 5 February 2009 BYQ28X-200 Dual ultrafast rugged rectifier diode mounting base ( max. 0.6 14.4 3.30 2.6 3.2 3.0 3 0.4 13.5 2.79 3.0 2 ...

Page 8

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BYQ28X-200 separated from data sheet BYQ28X_SERIES_1. BYQ28X_SERIES_1 19960801 BYQ28X-200_2 Product data sheet ...

Page 9

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 5 February 2009 BYQ28X-200 Dual ultrafast rugged rectifier diode © NXP B.V. 2009. All rights reserved ...

Page 10

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BYQ28X-200_2 All rights reserved. Date of release: 5 February 2009 ...

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