BYQ28X-200,127 NXP Semiconductors, BYQ28X-200,127 Datasheet - Page 3

• Manufacturer Part Number: BYQ28X-200,127
• Description: DIODE RECT UFAST 200V TO220F
• Manufacturer: NXP Semiconductors

Specifications of BYQ28X-200,127

• Package / Case: TO-220-3 Full Pack
• Voltage - Forward (vf) (max) @ If: 1.25V @ 10A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 25ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.1 V
• Recovery Time: 25 ns
• Forward Continuous Current: 10 A
• Max Surge Current: 55 A
• Reverse Current Ir: 10 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Dc: 0632
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3431; 934039600127; BYQ28X-200

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BYQ28X-200_2
Product data sheet
Symbol
V
V
V
I
I
I
I
I
T
T
Electrostatic discharge
V
O(AV)
FRM
FSM
RRM
RSM
Fig 1.
stg
j
RRM
RWM
R
ESD
P
(W)
tot
8
6
4
2
0
average forward current; square waveform;
maximum values
Forward power dissipation as a function of
0
Limiting values
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average output current
repetitive peak forward
current
non-repetitive peak
forward current
repetitive peak reverse
current
non-repetitive peak
reverse current
storage temperature
junction temperature
electrostatic discharge
voltage
2
0.1
0.2
4
0.5
Conditions
DC
SQW; δ = 0.5; T
see
SQW; δ = 0.5; t
t
t
t
t
HBM; C = 250 pF; R = 1.5 kΩ; all pins
p
p
p
p
= 10 ms; SIN; T
= 8.3 ms; SIN; T
= 2 µs; δ = 0.001
= 100 µs
6
Figure
I
F(AV)
001aag976
δ = 1
(A)
1; see
Rev. 02 — 5 February 2009
8
p
h
= 25 µs; T
≤ 92 °C; both diodes conducting;
j(init)
Figure 2
j(init)
= 25 °C; per diode
= 25 °C; per diode
Fig 2.
h
≤ 92 °C; per diode
P
(W)
tot
6
4
2
0
average forward current; sinusoidal waveform;
maximum values
Forward power dissipation as a function of
0
Dual ultrafast rugged rectifier diode
4.0
2
2.8
2.2
BYQ28X-200
1.9
Min
-
-
-
-
-
-
-
-
-
-40
-
-
4
a = 1.57
I
F(AV)
© NXP B.V. 2009. All rights reserved.
001aag977
Max
200
200
200
10
10
50
55
0.2
0.2
150
150
8
(A)
6
Unit
V
V
V
A
A
A
A
A
A
°C
°C
kV
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