BYQ28X-200,127 NXP Semiconductors, BYQ28X-200,127 Datasheet - Page 4

• Manufacturer Part Number: BYQ28X-200,127
• Description: DIODE RECT UFAST 200V TO220F
• Manufacturer: NXP Semiconductors

Specifications of BYQ28X-200,127

• Package / Case: TO-220-3 Full Pack
• Voltage - Forward (vf) (max) @ If: 1.25V @ 10A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 25ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.1 V
• Recovery Time: 25 ns
• Forward Continuous Current: 10 A
• Max Surge Current: 55 A
• Reverse Current Ir: 10 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Dc: 0632
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3431; 934039600127; BYQ28X-200

Philips Semiconductors
August 1996
Rectifier diodes
ultrafast
Fig.9. Typical and maximum forward characteristic
1000
0.01
10
Fig.8. Maximum I
15
Fig.7. Maximum t
100
5
0
0.1
10
10
1
1
0
1
IF / A
1
trr / ns
Irrm / A
Tj=150C
Tj=25C
I
F
= f(V
0.5
typ
F
rrm
-dIF/dt (A/us)
); parameter T
rr
dIF/dt (A/us)
VF / V
at T
IF=1A
at T
IF=5A
10
10
j
j
= 25 ˚C; per diode
= 25 ˚C; per diode
IF=5A
IF=1A
1
j
max
BYQ28
100
100
1.5
4
Fig.11. Transient thermal impedance; per diode;
Fig.10. Maximum Q
100
0.01
1.0
0.1
10
0.1
10
1
10us
1.0
Zth j-hs (K/W)
Qs / nC
1ms
Z
without heatsink compound
th j-hs
-dIF/dt (A/us)
s
IF=5A
IF=2A
IF=1A
at T
= f(t
tp / s
10
P
D
j
p
= 25 ˚C; per diode
).
with heatsink compound
BYQ28X series
0.1s
Product specification
t p
t
Rev 1.000
10s
100