RB521S-30TE61 Rohm Semiconductor, RB521S-30TE61 Datasheet - Page 2
![DIODE SCHOTTKY 30V 200MA SOD-523](/photos/5/29/52915/sc-79_emd2_sml.jpg)
RB521S-30TE61
Manufacturer Part Number
RB521S-30TE61
Description
DIODE SCHOTTKY 30V 200MA SOD-523
Manufacturer
Rohm Semiconductor
Specifications of RB521S-30TE61
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
500mV @ 200mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
30µA @ 10V
Speed
Small Signal =< 200mA (Io), Any Speed
Mounting Type
Surface Mount
Package / Case
SC-79, SOD-523
Repetitive Reverse Voltage Vrrm Max
30V
Forward Current If(av)
200mA
Forward Voltage Vf Max
500mV
Forward Surge Current Ifsm Max
1A
Diode Case Style
SOD-523
No. Of Pins
2
Svhc
No SVHC
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
1 A
Configuration
Single
Forward Voltage Drop
0.5 V
Maximum Reverse Leakage Current
30 uA
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RB521S-30TE61TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RB521S-30TE61
Manufacturer:
POWER
Quantity:
12 100
Company:
Part Number:
RB521S-30TE61
Manufacturer:
ROHM
Quantity:
3 000
Part Number:
RB521S-30TE61
Manufacturer:
ROHM/罗姆
Quantity:
20 000
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
RB521S-30
0.001
1000
1000
0.01
100
450
440
430
420
410
400
20
15
10
100
0.1
10
10
5
0
0.001
1
0
Ta=75℃
Ta=125℃
FORWARD VOLTAGE:VF(mV)
100
VF-IF CHARACTERISTICS
Rth-t CHARACTERISTICS
IFSM DISPERSION MAP
VF DISPERSION MAP
0.1
AVE:421.0mV
200
TIME:(s)
AVE:5.60A
IM=1mA
Mounted on epoxy board
1ms
Ifsm
300
300us
Ta=25℃
10
time
8.3ms
Ta=-25℃
IF=200mA
Ta=25℃
n=10pcs
Rth(j-a)
Rth(j-c)
400
IF=20mA
1cyc
1000
500
100000
10000
0.15
0.05
50
45
40
35
30
25
20
15
10
1000
0.2
0.1
0.01
5
0
100
10
0.1
0
10
5
0
1
0
1
0
Sin(θ=180)
IFSM-CYCLE CHARACTERISTICS
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
0.1
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
AVERAGE RECTIFIED
NUMBER OF CYCLES
IR DISPERSION MAP
D=1/2
AVE:4.775uA
2/3
10
0.2
Ifsm
10
0.3
8.3ms
20
1cyc
Ta=25℃
VR=10V
n=30pcs
DC
8.3ms
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.4
100
30
0.5
100
0.5
0.4
0.3
0.2
0.1
10
20
19
18
17
16
15
14
13
12
11
10
10
1
5
0
0
0
1
0
Sin(θ=180)
IFSM-t CHARACTERISTICS
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-P
REVERSE VOLTAGE:VR(V)
5
Ct DISPERSION MAP
10
R
CHARACTERISTICS
TIME:t(ms)
AVE:14.33pF
DC
10
10
2011.03 - Rev.F
D=1/2
Ifsm
20
Data Sheet
15
Ta=25℃
n=10pcs
f=1MHz
f=1MHz
VR=0V
t
30
20
100