RB520S-40TE61 Rohm Semiconductor, RB520S-40TE61 Datasheet - Page 2

• Manufacturer Part Number: RB520S-40TE61
• Description: DIODE SCHOTTKY 40V 200MA SOD523
• Manufacturer: Rohm Semiconductor

Specifications of RB520S-40TE61

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 550mV @ 100mA
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 200mA
• Current - Reverse Leakage @ Vr: 10µA @ 40V
• Speed: Small Signal =< 200mA (Io), Any Speed
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Repetitive Reverse Voltage Vrrm Max: 40V
• Forward Current If(av): 200mA
• Forward Voltage Vf Max: 390mV
• Forward Surge Current Ifsm Max: 1A
• Diode Case Style: SOD-523
• No. Of Pins: 2
• Svhc: No SVHC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: RB520S-40TE61

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RB520S-40
0.001
10000
1000
0.01
1000
100
0.1
30
25
20
15
10
100
10
510
500
490
480
470
460
10
5
0
1
0.001
0
IM=1mA
Mounted on epoxy board
Ta=75℃
100
FORWARD VOLTAGE：VF(mV)
0.01
VF-IF CHARACTERISTICS
1ms
Rth-t CHARACTERISTICS
IFSM DISPERSION MAP
300us
Ta=125℃
VF DISPERSION MAP
200
time
0.1
AVE:491.2mV
TIME:t(s)
AVE:5.60A
IF=200mA
300
1
Ifsm
400
10
IF=100mA
Ta=25℃
n=30pcs
8.3ms
Ta=-25℃
Rth(j-a)
500
Ta=25℃
Rth(j-c)
100
1cyc
600
1000
0.0001
0.3
0.2
0.1
0.001
1000
1000
0
0.01
900
800
700
600
500
400
300
200
100
10
100
0.1
10
5
0
0
1
0
1
0
Sin(θ＝180)
IFSM-CYCLE CHARACTERISTICS
0.1
REVERSE VOLTAGE：VR(V)
FORWARD CURRENT：Io(A)
VR-IR CHARACTERISTICS
Io-Pf CHARACTERISTICS
D=1/2
10
NUMBER OF CYCLES
AVERAGE RECTIFIED
IR DISPERSION MAP
0.2
AVE:67.0nA
2/3
Ifsm
10
20
0.3
8.3ms
DC
Ta=75℃
Ta=-25℃
Ta=125℃
Ta=25℃
1cyc
30
Ta=25℃
0.4
VR=10V
n=30pcs
8.3ms
100
40
0.5
0.008
0.006
0.004
0.002
100
0.01
10
50
45
40
35
30
25
20
15
10
15
10
1
5
0
5
0
0
0
0.1
0
Sin(θ＝180)
IFSM-t CHARACTERISTICS
VR-Ct CHARACTERISTICS
VR-P
REVERSE VOLTAGE:VR(V)
REVERSE VOLTAGE:VR(V)
Ct DISPERSION MAP
10
10
R
1
CHARACTERISTICS
TIME:t(ms)
AVE:23.2pF
D=1/2
20
DC
Ifsm
20
10
f=1MHｚ
2011.03 - Rev.E
Ta=25℃
n=10pcs
f=1MHz
VR=0V
30
t
Data Sheet
100
30
40